BLS70R180-I Todos los transistores

 

BLS70R180-I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLS70R180-I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 990 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-262

 Búsqueda de reemplazo de MOSFET BLS70R180-I

 

BLS70R180-I Datasheet (PDF)

 ..1. Size:585K  belling
 bls70r180-p bls70r180-a bls70r180-i bls70r180-b bls70r180-w.pdf pdf_icon

BLS70R180-I

BLS70R180 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.1. Size:604K  belling
 bls70r600-p bls70r600-a bls70r600-u bls70r600-d.pdf pdf_icon

BLS70R180-I

BLS70R600 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:632K  belling
 bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf pdf_icon

BLS70R180-I

BLS70R420 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.3. Size:1100K  belling
 bls70r900-d.pdf pdf_icon

BLS70R180-I

BLS70R900 - Power MOSFET 1 Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

MOSTRAR MÁS

Otros transistores... BLS65R380-P , BLS65R380-U , BLS65R560-A , BLS65R560-D , BLS65R560-P , BLS65R560-U , BLS70R180-A , BLS70R180-B , BS170 , BLS70R180-P , BLS70R180-W , BLS70R420-A , BLS70R420-B , BLS70R420-D , BLS70R420-P , BLS70R420-U , BLS70R600-A .

 

 
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