BLS70R180-I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLS70R180-I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 220 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 990 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de BLS70R180-I MOSFET
BLS70R180-I Datasheet (PDF)
bls70r180-p bls70r180-a bls70r180-i bls70r180-b bls70r180-w.pdf

BLS70R180 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls70r600-p bls70r600-a bls70r600-u bls70r600-d.pdf

BLS70R600 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf

BLS70R420 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls70r900-d.pdf

BLS70R900 - Power MOSFET 1Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DSG024N10N3 | DSG019N04L | DSG014N04N | DSE270N12N3 | DSE140N12N3 | DSE108N20NA | DSE065N10L3A | DSE058N15NA | DSE054N10N3 | DSE051N08N3 | DSE050N14N | DSE047N08N3 | DSE043N14N | DSE028N10N3 | DSE026N10NA | DSE026N10N3A
Popular searches
bc239 | 2sc3264 | mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31