FQPF12N60C Todos los transistores

 ..1. Size:1123K  fairchild semi
 fqpf12n60c.pdf

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored

 ..2. Size:1170K  fairchild semi
 fqp12n60c fqpf12n60c.pdf

September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especiall

 ..3. Size:1123K  onsemi
 fqpf12n60c.pdf

November 2013 FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 m Description Features These N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC) been especially tailored

 ..4. Size:224K  inchange semiconductor
 fqpf12n60c.pdf

isc N-Channel Mosfet Transistor FQPF12N60C FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. A

 0.1. Size:803K  fairchild semi
 fqpf12n60ct.pdf

September 2006 QFET FQPF12N60CT 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 21 pF) This advanced technology has been especially tailored

 5.1. Size:549K  fairchild semi
 fqpf12n60.pdf

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been

 5.2. Size:547K  fairchild semi
 fqpf12n60 fqpf12n60t.pdf

April 2000 TM QFET QFET QFET QFET FQPF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been