FQPF12N60C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQPF12N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
FQPF12N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQPF12N60C Datasheet (PDF)
fqpf12n60c.pdf
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
fqp12n60c fqpf12n60c.pdf
September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall
fqpf12n60c.pdf
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
fqpf12n60c.pdf
isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A
fqpf12n60ct.pdf
September 2006 QFETFQPF12N60CT600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21 pF)This advanced technology has been especially tailored
fqpf12n60.pdf
April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
fqpf12n60 fqpf12n60t.pdf
April 2000TMQFETQFETQFETQFETFQPF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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