All MOSFET. FQPF12N60C Datasheet

 

FQPF12N60C Datasheet and Replacement


   Type Designator: FQPF12N60C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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FQPF12N60C Datasheet (PDF)

 ..1. Size:1123K  fairchild semi
 fqpf12n60c.pdf pdf_icon

FQPF12N60C

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 ..2. Size:1170K  fairchild semi
 fqp12n60c fqpf12n60c.pdf pdf_icon

FQPF12N60C

September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall

 ..3. Size:1123K  onsemi
 fqpf12n60c.pdf pdf_icon

FQPF12N60C

November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored

 ..4. Size:224K  inchange semiconductor
 fqpf12n60c.pdf pdf_icon

FQPF12N60C

isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

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Datasheet: FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , IRF1010E , FQP20N06 , FQP20N06L , FQP22N30 , FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C .

History: 2SK3068

Keywords - FQPF12N60C MOSFET datasheet

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