MPSW65M170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSW65M170
   Código: MP65M170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 38.5 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
   Paquete / Cubierta: TO-247

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MPSW65M170 Datasheet (PDF)

..1. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf

MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2

7.1. Size:1042K cn marching-power
mpsw65m045b.pdf

MPSW65M045B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, ID =65ARDS(on) @ : 0.045 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD DiodeS TO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp

7.2. Size:4748K cn marching-power
mpsw65m065.pdf

MPSW65M065650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=55ARDS(on) @ :65m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking

7.3. Size:3986K cn marching-power
mpsw65m046cfd.pdf

MPSW65M046CFD650V Super-Junction Power MOSFETJunction Power MOSFETFEATURESBVDSS=650 V, ID=62ARDS(on) @ :0.046 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Pow

7.4. Size:1521K cn marching-power
mpsw65m092cfd.pdf

MPSW65M092CFD650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=41ARDS(on) @ :0.092 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STB100NF03L-03T4

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