Справочник MOSFET. MPSW65M170

 

MPSW65M170 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MPSW65M170
   Маркировка: MP65M170
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38.5 nC
   trⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 72 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для MPSW65M170

 

 

MPSW65M170 Datasheet (PDF)

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 mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf

MPSW65M170 MPSW65M170

MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2

 7.1. Size:1042K  cn marching-power
 mpsw65m045b.pdf

MPSW65M170 MPSW65M170

MPSW65M045B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, ID =65ARDS(on) @ : 0.045 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD DiodeS TO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp

 7.2. Size:4748K  cn marching-power
 mpsw65m065.pdf

MPSW65M170 MPSW65M170

MPSW65M065650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=55ARDS(on) @ :65m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking

 7.3. Size:3986K  cn marching-power
 mpsw65m046cfd.pdf

MPSW65M170 MPSW65M170

MPSW65M046CFD650V Super-Junction Power MOSFETJunction Power MOSFETFEATURESBVDSS=650 V, ID=62ARDS(on) @ :0.046 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Pow

 7.4. Size:1521K  cn marching-power
 mpsw65m092cfd.pdf

MPSW65M170 MPSW65M170

MPSW65M092CFD650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=41ARDS(on) @ :0.092 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P

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History: VBA1104N

 

 
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