MPSA65M830B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA65M830B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 26 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 19 nS
Cossⓘ - Capacitancia de salida: 15 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de MPSA65M830B MOSFET
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MPSA65M830B datasheet
..1. Size:1092K cn marching-power
mpsa65m830b.pdf 
MPSA65M830B 650V N-Channel Super Junction MOSFET Features BV DSS=650 V, I D =5.5 A RDS(on) @ 0.83 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD Diode S TO-220F Application Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
6.1. Size:1404K cn marching-power
mpsa65m810 mpsp65m810 mpsu65m810 mpsd65m810.pdf
MPSA65M810,MPSP65M810,MPSU65M810, MPSD65M810 FEATURES APPLICATIONS BVDSS=650V, ID=6A Switch Mode Power Supply (SMPS) RDS(on) 0.81 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-252 TO-220 TO-220F TO-251 Device Marking and Package Information Ordering code
7.1. Size:1867K cn marching-power
mpsa65m390 mpsp65m390 mpsu65m390 mpsd65m390 mpsy65m390.pdf
MPSA65M390,MPSP65M390,MPSU65M390, MPSD65M390, MPSY65M390 FEATURES APPLICATIONS BVDSS=650V, ID=11A Switch Mode Power Supply (SMPS) RDS(on) 0.39 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-220 TO-252 TO-220F TO-251 DFN 8*8 Device Marking and Package Inform
7.2. Size:1903K cn marching-power
mpsa65m650 mpsp65m650 mpsu65m650 mpsd65m650 mpsy65m650.pdf
MPSA65M650,MPSP65M650,MPSU65M650, MPSD65M650,MPSY65M650 FEATURES APPLICATIONS BVDSS=650V, ID=8A Switch Mode Power Supply (SMPS) RDS(on) 0.65 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-251 DFN 8*8 TO-220F TO-220 TO-252 Device Marking and Package Informa
7.3. Size:2383K cn marching-power
mpsa65m280cfd.pdf
MPSA65M280CFD 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack
7.4. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf
MPSA65M170,MPSP65M170,MPSC65M170, MPSH65M170,MPSW65M170,MPSY65M170 FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.17 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant D S S Pin1 G G Pin2 Driver Source TO-247 TO-220F TO-2
7.5. Size:876K cn marching-power
mpsa65m640b.pdf
MPSA65M640B 650V N-Channel Super Junction MOSFET Features BV DSS=650 V, I D=6.7 A RDS(on) @ 0.64 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD Diode G D Application S TO-220F Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
7.6. Size:1120K cn marching-power
mpsa65m165b.pdf
MPSA65M165B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D =20.4A RDS(on) @ 0.165 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (
7.7. Size:1212K cn marching-power
mpsa65m1k0b.pdf
MPSA65M1K 0B 650V N-Channel Super Junction MOSFET Features BV DSS=650 V, I D=4.8 A RDS(on) @ 1.0 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
7.8. Size:1152K cn marching-power
mpsa65m110b.pdf
MPSA65M110B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D=29.1A RDS(on) @ 0.11 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP
7.9. Size:1118K cn marching-power
mpsa65m990 mpsp65m990 mpsu65m990 mpsd65m990.pdf
MPSA65M990,MPSP65M990,MPSU65M990, MPSD65M990 FEATURES APPLICATIONS BVDSS=650V, ID=4A Switch Mode Power Supply (SMPS) RDS(on) 0.99 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-252 TO-220 TO-220F TO-251 Device Marking and Package Information Ordering code
7.10. Size:1089K cn marching-power
mpsa65m380b.pdf
MPSA65M380B 650V N Channel Super Junction MOSFET Features BV DSS=650 V, I D =10.4 A RDS(on) @ 0.38 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl
7.11. Size:2125K cn marching-power
mpsa65m180cfd.pdf
MPSA65M180CFD 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on) Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdness G D S TO-220F APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stages Device Marking and Pack
7.12. Size:1107K cn marching-power
mpsa65m210b.pdf
MPSA65M210B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D=16.8A RDS(on) @ 0.21 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U
7.13. Size:1651K cn marching-power
mpsa65m1k6.pdf
MPSA65M1K6 Power MOSFET 650V Super-Junction Power MOSFET Junction Power MOSFET Features BV DSS=650 V, I D=3 A RDS(on) @ 1.6 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliant G D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device
7.14. Size:1783K cn marching-power
mpsa65m1k5.pdf
MPSA65M1K5 Power MOSFET 650V Super-Junction Power MOSFET Junction Power MOSFET Features BV DSS=650 V, I D=3 A RDS(on) @ 1.5 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliant G D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device
7.15. Size:1117K cn marching-power
mpsa65m130b.pdf
MPSA65M130B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D=25A RDS(on) @ 0.13 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)
7.16. Size:2181K cn marching-power
mpsa65m260 mpsp65m260 mpsh65m260 mpsc65m260 mpsy65m260.pdf
MPSA65M260,MPSP65M260,MPSC65M260, MPSH65M260,MPSY65M260 FEATURES APPLICATIONS BVDSS=650V, ID=15A Switch Mode Power Supply (SMPS) RDS(on) 0.26 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant TO-220F TO-220 TO-262 TO-263 DFN 8*8 Device Marking and Package Informat
Otros transistores... MPSP65M650, MPSU65M650, MPSD65M650, MPSY65M650, MPSA65M810, MPSP65M810, MPSU65M810, MPSD65M810, IRFP260, MPSA65M990, MPSP65M990, MPSU65M990, MPSD65M990, MPSA70M200CFD, MPSA70M290, MPSP70M290, MPSH70M290
