MPSA65M830B MOSFET. Datasheet pdf. Equivalent
Type Designator: MPSA65M830B
Marking Code: MP65M830B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 26 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.2 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
Package: TO-220F
MPSA65M830B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPSA65M830B Datasheet (PDF)
mpsa65m830b.pdf
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