MPSA80M250B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSA80M250B
   Código: MP80M250B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 43 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET MPSA80M250B

MPSA80M250B Datasheet (PDF)

..1. Size:1101K cn marching-power
mpsa80m250b.pdf

MPSA80M250B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =18 ARDS(on) @ :0.25 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

7.1. Size:1064K cn marching-power
mpsa80m670b.pdf

MPSA80M670B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =8.0 A RDS(on) @ :0.67 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Sup

7.2. Size:1073K cn marching-power
mpsa80m380b.pdf

MPSA80M380B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =13.0 A RDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD DiodeS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Su

7.3. Size:1141K cn marching-power
mpsa80m850b.pdf

MPSA80M850B800V N-Channel Super Junction MOSFETFeaturesBVDSS=800 V, ID =6.6 ARDS(on) @ :0.85 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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