MPSD70M710B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSD70M710B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.71 Ohm
Paquete / Cubierta: TO-252
- Selección de transistores por parámetros
MPSD70M710B Datasheet (PDF)
mpsd70m710b.pdf

MPSD70M710B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =6.4 ARDS(on) @ :0.71 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC)
mpsd70m600b.pdf

MPSD70M600B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =7.3 ARDS(on) @ :0.60 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
mpsd70m910b.pdf

MPSD70M910B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =5.2 ARDS(on) @ :0.91 (Max) VGS=10VD Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformityS 100% Avalanche TestedGTO-252 Built-in ESD DiodeApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IMW65R027M1H | CSD16410Q5A
History: IMW65R027M1H | CSD16410Q5A



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