MPSD70M710B MOSFET. Datasheet pdf. Equivalent
Type Designator: MPSD70M710B
Marking Code: MP70M710B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 16 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.71 Ohm
Package: TO-252
MPSD70M710B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPSD70M710B Datasheet (PDF)
mpsd70m710b.pdf
MPSD70M710B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =6.4 ARDS(on) @ :0.71 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC)
mpsd70m600b.pdf
MPSD70M600B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =7.3 ARDS(on) @ :0.60 (Max) VGS=10V Very Low FOM (RDS(on) X Qg)D Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedS Built-in ESD DiodeGTO-252Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
mpsd70m910b.pdf
MPSD70M910B700V N-Channel Super Junction MOSFETFeaturesBVDSS=700 V, ID =5.2 ARDS(on) @ :0.91 (Max) VGS=10VD Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformityS 100% Avalanche TestedGTO-252 Built-in ESD DiodeApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
