MPSD70M910B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSD70M910B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 13 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.91 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de MPSD70M910B MOSFET
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MPSD70M910B datasheet
mpsd70m910b.pdf
MPSD70M910B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =5.2 A RDS(on) @ 0.91 (Max) V GS=10V D Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity S 100% Avalanche Tested G TO-252 Built-in ESD Diode Application Switch Mode Power Supply (SMPS) TV power & LED Lighting Power
mpsd70m600b.pdf
MPSD70M600B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =7.3 A RDS(on) @ 0.60 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) D Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested S Built-in ESD Diode G TO-252 Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC
mpsd70m710b.pdf
MPSD70M710B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =6.4 A RDS(on) @ 0.71 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) D Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested S Built-in ESD Diode G TO-252 Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC)
Otros transistores... MPSA80M250B, MPSA80M380B, MPSA80M670B, MPSA80M850B, MPSC60M160CFD, MPSC70M360B, MPSD70M600B, MPSD70M710B, AO4407, MPSU70M1K1B, MPSU70M1K5, MPSW60M043CFD, MPSW60M086CFD, MPSW60M150B, MPSW65M045B, MPSW65M046CFD, MPSW65M065
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