MPSD70M910B Specs and Replacement
Type Designator: MPSD70M910B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.91 Ohm
Package: TO-252
MPSD70M910B substitution
- MOSFET ⓘ Cross-Reference Search
MPSD70M910B datasheet
mpsd70m910b.pdf
MPSD70M910B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =5.2 A RDS(on) @ 0.91 (Max) V GS=10V D Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity S 100% Avalanche Tested G TO-252 Built-in ESD Diode Application Switch Mode Power Supply (SMPS) TV power & LED Lighting Power... See More ⇒
mpsd70m600b.pdf
MPSD70M600B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =7.3 A RDS(on) @ 0.60 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) D Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested S Built-in ESD Diode G TO-252 Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC... See More ⇒
mpsd70m710b.pdf
MPSD70M710B 700V N-Channel Super Junction MOSFET Features BV DSS=700 V, I D =6.4 A RDS(on) @ 0.71 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) D Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested S Built-in ESD Diode G TO-252 Application Switch Mode Power Supply (SMPS) Power Factor Correction (PFC)... See More ⇒
Detailed specifications: MPSA80M250B, MPSA80M380B, MPSA80M670B, MPSA80M850B, MPSC60M160CFD, MPSC70M360B, MPSD70M600B, MPSD70M710B, AO4407, MPSU70M1K1B, MPSU70M1K5, MPSW60M043CFD, MPSW60M086CFD, MPSW60M150B, MPSW65M045B, MPSW65M046CFD, MPSW65M065
Keywords - MPSD70M910B MOSFET specs
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