MPSY60M190B Todos los transistores

 

MPSY60M190B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSY60M190B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 149 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.195 Ohm
   Paquete / Cubierta: DFN8X8
 
   - Selección ⓘ de transistores por parámetros

 

MPSY60M190B Datasheet (PDF)

 ..1. Size:1029K  cn marching-power
 mpsy60m190b.pdf pdf_icon

MPSY60M190B

MPSY 60M190B-600V N-Channel Super Junction MOSFETFeaturesBV DSS=600 V, ID=18.6 ARDS(on) @ :0.19 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching lossD Excellent stability and uniformityS SPin1 : G 100% Avalanche TestedGPin2 : Driver Source Built-in ESD DiodeDFN8x8Application Switch Mode Power Suppl

 9.1. Size:1867K  cn marching-power
 mpsa65m390 mpsp65m390 mpsu65m390 mpsd65m390 mpsy65m390.pdf pdf_icon

MPSY60M190B

MPSA65M390,MPSP65M390,MPSU65M390,MPSD65M390, MPSY65M390 FEATURES APPLICATIONS BVDSS=650V, ID=11A Switch Mode Power Supply (SMPS)RDS(on):0.39(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220 TO-252TO-220FTO-251 DFN 8*8Device Marking and Package Inform

 9.2. Size:1903K  cn marching-power
 mpsa65m650 mpsp65m650 mpsu65m650 mpsd65m650 mpsy65m650.pdf pdf_icon

MPSY60M190B

MPSA65M650,MPSP65M650,MPSU65M650,MPSD65M650,MPSY65M650 FEATURES APPLICATIONS BVDSS=650V, ID=8A Switch Mode Power Supply (SMPS)RDS(on):0.65(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-251 DFN 8*8TO-220FTO-220TO-252Device Marking and Package Informa

 9.3. Size:1658K  cn marching-power
 mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf pdf_icon

MPSY60M190B

MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2

MOSTRAR MÁS

Otros transistores... MPSU70M1K5 , MPSW60M043CFD , MPSW60M086CFD , MPSW60M150B , MPSW65M045B , MPSW65M046CFD , MPSW65M065 , MPSW65M092CFD , 7N60 , MPTD50N60N , MPTO2N10 , MPTO3N60 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B .

History: CS3N50DD

 

 
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