FQP8N60C Todos los transistores

 

FQP8N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP8N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220
 

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FQP8N60C Datasheet (PDF)

 ..1. Size:927K  fairchild semi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQP8N60C

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 ..2. Size:1332K  fairchild semi
 fqp8n60c.pdf pdf_icon

FQP8N60C

April 2014FQP8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 DescriptionFeaturesThese N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 3.75 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to mi

 ..3. Size:928K  onsemi
 fqp8n60c fqpf8n60c.pdf pdf_icon

FQP8N60C

QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to

 9.1. Size:1280K  fairchild semi
 fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf pdf_icon

FQP8N60C

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

MOSTRAR MÁS

Otros transistores... FQP20N06L , FQP22N30 , FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , P60NF06 , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 .

 

 
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