FQP8N60C MOSFET Datasheet: N-Ch, 600V, 7.5A. Full specification with pinout and replacement list

FQP8N60C Specs and Replacement

Type Designator: FQP8N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

FQP8N60C substitution

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FQP8N60C datasheet

..1. Size:927K fairchild semi
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QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to... See More ⇒

..2. Size:1332K fairchild semi
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April 2014 FQP8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Description Features These N-Channel enhancement mode power field effect 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 3.75 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tailored to mi... See More ⇒

..3. Size:928K onsemi
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9.1. Size:1280K fairchild semi
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January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has ... See More ⇒