FQP30N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP30N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Paquete / Cubierta: TO220

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FQP30N06 Datasheet (PDF)

..1. Size:660K fairchild semi
fqp30n06.pdf

TMQFETFQP30N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been especially tailored to Fast s

0.1. Size:623K fairchild semi
fqp30n06l.pdf

May 2001TMQFETFQP30N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32A, 60V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15 nC)planar stripe, DMOS technology. Low Crss ( typical 50 pF)This advanced technology has been especially tailo

0.2. Size:1135K cn vbsemi
fqp30n06l.pdf

FQP30N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

Otros transistores... FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , P60NF06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 .

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