FQP30N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP30N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 79 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO220
FQP30N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP30N06 Datasheet (PDF)
1.1. fqp30n06l.pdf 
Size:623K _fairchild_semi
May 2001 TM QFET FQP30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 32A, 60V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 50 pF) This advanced technology has been especially tailored to • Fas
1.2. fqp30n06.pdf Size:660K _fairchild_semi
TM QFET FQP30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 30A, 60V, RDS(on) = 0.04? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 40 pF) This advanced technology has been especially tailored to • Fast switching minim
Datasheet: FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 , 2SK3568 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , FCPF11N60 , FQP3N30 .
