FIR10N80FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR10N80FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 190 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de FIR10N80FG MOSFET
FIR10N80FG Datasheet (PDF)
fir10n80fg.pdf

FIR10N80FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 800 VID 9 APD(TC=25) 190 WRDS(ON) 1.2 G D S FeaturesgSchematic dia ram D Fast Switching Low ON Resistance(Rdson1.20) G Low Gate Charge (Typical Data: 48nC) Low Reverse transfer capacitances(Typical: 17pF) S 100% Single Pulse avalanche energy Test Marking DiagramApplicationsY
fir10n50fg.pdf

FIR10N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 10 A PD(TC=25) 40 W RDS(ON)Typ 0.5 General Description G D S , the silicon N-channel Enhanced FIR10N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can be
fir10n70fg.pdf

FIR10N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 37nC (Typ.). BVDSS=700V,ID=10A GDS RDS(on) : 1.0 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Locati
fir10n20lg.pdf

FIR10N20LG200V N-Channel MOSFET-C TO-252 2 Features Low Intrinsic Capacitances Excellent Switching Characteristics1 Extended Safe Operating Area Unrivalled Gate Charge : 22 nC (Typ.)3 BVDSS=200V,ID=10A Lower RDS(on) : 0.4 (Max) @VG=10V 100% Avalanche Tested1.Gate (G)2.Drain (D)3.Source (S)Absolute Maximum Ratings (Ta=25 unless otherw
Otros transistores... FDM60R65AN4G , FDM80R120AN4G , FDZ65T300D8G , FDZ90T150PG , FIR10N10LG , FIR10N20LG , FIR10N50FG , FIR10N70FG , IRF540N , FIR110N10PG , FIR11N40FG , FIR11N90ANG , FIR11NS65AFG , FIR11NS70AFG , FIR120N08PG , FIR12N15LG , FIR12N70FG .
History: WMS08P04TS | MDP7N50 | STF12NM60N | FDMS86369-F085 | HM2302F | CEF05N8 | SPD3N80G
History: WMS08P04TS | MDP7N50 | STF12NM60N | FDMS86369-F085 | HM2302F | CEF05N8 | SPD3N80G



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
a933 | 2sa818 replacement | irfb3607 datasheet | 2n2907 equivalent | c2026 | mpsa56 transistor equivalent | 13009 transistor | irf3205 equivalent