FQP32N20C Todos los transistores

 

FQP32N20C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP32N20C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.082 Ohm
   Paquete / Cubierta: TO220
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FQP32N20C Datasheet (PDF)

 ..1. Size:1208K  fairchild semi
 fqp32n20c fqpf32n20c.pdf pdf_icon

FQP32N20C

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

 ..2. Size:1184K  onsemi
 fqp32n20c fqpf32n20c.pdf pdf_icon

FQP32N20C

QFETFQP32N20C/FQPF32N20C200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 82.5 nC)planar stripe, DMOS technology. Low Crss ( typical 185 pF)This advanced technology has been especially tailo

 8.1. Size:856K  fairchild semi
 fqp32n12v2 fqpf32n12v2.pdf pdf_icon

FQP32N20C

QFETFQP32N12V2/FQPF32N12V2120V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been especially tailor

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History: 2SK2931 | FQPF13N50C

 

 
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