FIR14N50FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR14N50FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO-220F

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FIR14N50FG Datasheet (PDF)

..1. Size:4922K first semi
fir14n50fg.pdf

FIR14N50FGCREAT BY ARTAdvanced N-Ch Power MOSFET-GPIN Connection TO-220FVDSS 500 VID 13 APD (TC=25) 150 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram Low ON Resistance(Rdson0.5 ) D Low Gate Charge (Typical Data:85nC) Low Reverse transfer capacitances(Typical:100pF) G 100% Single Pulse avalanche energy Test S Marking Di

8.1. Size:2684K first semi
fir14ns70afg.pdf

FIR14NS70AFG700V N-Channel Super Junction MOSFET-HFeaturesPIN Connection TO-220F Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD DiodeG ApplicationD S Switch Mode Power Supply (SMPS) gSchematic dia ram Uninterruptible Power Supply (UPS) Power Factor Correctio

8.2. Size:2174K first semi
fir14n65fg.pdf

FIR14N65FG14A, 650V N-CHANNEL MOSFET-EGENERAL DESCRIPTION PIN Connection TO-220FThe FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

8.3. Size:2592K first semi
fir14ns65afg.pdf

FIR14NS65AFG14A, 650V DP MOS POWER TRANSISTOR-SDESCRIPTIONPIN Connection TO-220FFIR14NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Fu

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