Справочник MOSFET. FIR14N50FG

 

FIR14N50FG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FIR14N50FG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 90 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FIR14N50FG

 

 

FIR14N50FG Datasheet (PDF)

 ..1. Size:4922K  first semi
 fir14n50fg.pdf

FIR14N50FG FIR14N50FG

FIR14N50FGCREAT BY ARTAdvanced N-Ch Power MOSFET-GPIN Connection TO-220FVDSS 500 VID 13 APD (TC=25) 150 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram Low ON Resistance(Rdson0.5 ) D Low Gate Charge (Typical Data:85nC) Low Reverse transfer capacitances(Typical:100pF) G 100% Single Pulse avalanche energy Test S Marking Di

 8.1. Size:2684K  first semi
 fir14ns70afg.pdf

FIR14N50FG FIR14N50FG

FIR14NS70AFG700V N-Channel Super Junction MOSFET-HFeaturesPIN Connection TO-220F Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD DiodeG ApplicationD S Switch Mode Power Supply (SMPS) gSchematic dia ram Uninterruptible Power Supply (UPS) Power Factor Correctio

 8.2. Size:2174K  first semi
 fir14n65fg.pdf

FIR14N50FG FIR14N50FG

FIR14N65FG14A, 650V N-CHANNEL MOSFET-EGENERAL DESCRIPTION PIN Connection TO-220FThe FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

 8.3. Size:2592K  first semi
 fir14ns65afg.pdf

FIR14N50FG FIR14N50FG

FIR14NS65AFG14A, 650V DP MOS POWER TRANSISTOR-SDESCRIPTIONPIN Connection TO-220FFIR14NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Fu

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 

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