FIR18N50FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR18N50FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 222 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO-220F
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FIR18N50FG datasheet
fir18n50fg.pdf
FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b
fir18n20g.pdf
FIR18N20G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)
fir18n65fg.pdf
FIR18N65FG 650V N-Channel MOSFET-D . PIN Connection TO-220F Features 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC) G D S Low Crss ( typical 6.2pF) Fast switching Schematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking Diagram Y = Year A = Assembly Location YAWWVT WW = Work Week FIR18N65F VT =
Otros transistores... FIR14N50FG, FIR14N65FG, FIR14NS65AFG, FIR14NS70AFG, FIR150N06PG, FIR15N10LG, FIR16N06DG, FIR16N50FG, 7N65, FIR18N65FG, FIR19N20LG, FIR20N06LG, FIR20N10LG, FIR20N15LG, FIR20N50FG, FIR20N60FG, FIR20N65FG
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