FIR18N50FG Specs and Replacement

Type Designator: FIR18N50FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO-220F

FIR18N50FG substitution

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FIR18N50FG datasheet

 ..1. Size:4194K  first semi
 fir18n50fg.pdf pdf_icon

FIR18N50FG

FIR18N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 18 A PD(TC=25 ) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b... See More ⇒

 8.1. Size:1726K  first silicon
 fir18n20g.pdf pdf_icon

FIR18N50FG

FIR18N20G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON) ... See More ⇒

 8.2. Size:2574K  first semi
 fir18n65fg.pdf pdf_icon

FIR18N50FG

FIR18N65FG 650V N-Channel MOSFET-D . PIN Connection TO-220F Features 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC) G D S Low Crss ( typical 6.2pF) Fast switching Schematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking Diagram Y = Year A = Assembly Location YAWWVT WW = Work Week FIR18N65F VT = ... See More ⇒

Detailed specifications: FIR14N50FG, FIR14N65FG, FIR14NS65AFG, FIR14NS70AFG, FIR150N06PG, FIR15N10LG, FIR16N06DG, FIR16N50FG, 7N65, FIR18N65FG, FIR19N20LG, FIR20N06LG, FIR20N10LG, FIR20N15LG, FIR20N50FG, FIR20N60FG, FIR20N65FG

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