FIR18N65FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR18N65FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 51 nS
Cossⓘ - Capacitancia de salida: 265 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
Paquete / Cubierta: TO-220F
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FIR18N65FG Datasheet (PDF)
fir18n65fg.pdf

FIR18N65FG650V N-Channel MOSFET-D . PIN Connection TO-220FFeatures 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC)G D S Low Crss ( typical 6.2pF) Fast switchingSchematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking DiagramY = YearA = Assembly LocationYAWWVTWW = Work WeekFIR18N65FVT =
fir18n20g.pdf

FIR18N20GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)
fir18n50fg.pdf

FIR18N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 18 A PD(TC=25) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IXTP50N28T | 3SK249
History: IXTP50N28T | 3SK249



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