FIR18N65FG Datasheet and Replacement
Type Designator: FIR18N65FG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 265 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-220F
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FIR18N65FG Datasheet (PDF)
fir18n65fg.pdf

FIR18N65FG650V N-Channel MOSFET-D . PIN Connection TO-220FFeatures 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC)G D S Low Crss ( typical 6.2pF) Fast switchingSchematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking DiagramY = YearA = Assembly LocationYAWWVTWW = Work WeekFIR18N65FVT =
fir18n20g.pdf

FIR18N20GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR18N20G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =18A RDS(ON)
fir18n50fg.pdf

FIR18N50FGN - CHANNEL MOSFET-G PIN Connection TO-220FVDSS 500 V ID 18 A PD(TC=25) 42.8 W RDS(ON)Typ 0.31 General Description G D S , the silicon N-channel Enhanced FIR18N50FGVDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can b
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - FIR18N65FG MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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