FIR2N60AFG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR2N60AFG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 30 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: TO-220F

 Búsqueda de reemplazo de FIR2N60AFG MOSFET

- Selecciónⓘ de transistores por parámetros

 

FIR2N60AFG datasheet

 ..1. Size:3992K  first semi
 fir2n60afg.pdf pdf_icon

FIR2N60AFG

FIR2N60AFG N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 2 A PD (TC=25 ) 35 W RDS(ON) 4.5 G Features D S Fast Switching g Schematic dia ram Low ON Resistance D Low Gate Charge Low Reverse transfer capacitances G 100% Single Pulse avalanche energy Test S Marking Diagram Applications Power switch circuit of adaptor and charger. Y = Year

 6.1. Size:1681K  first semi
 fir2n60alg.pdf pdf_icon

FIR2N60AFG

FIR2N60ALG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR2N60ALG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan D proprietary F-CellTM structure VDMOS technology. The improved G planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

 8.1. Size:2194K  first semi
 fir2n65afg.pdf pdf_icon

FIR2N60AFG

FIR2N65AFG Advanced N-Ch Power MOSFET-X PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.5nC (Typ.). BVDSS=650V,ID=2A G RDS(on) 4.2 (Typ) @VG=10V DS 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = Wor

 8.2. Size:2967K  first semi
 fir2n65abpg.pdf pdf_icon

FIR2N60AFG

FIR2N65ABPG FIR2N65ABPG 650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK) Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.7nC (Typ.). G D S BVDSS=650V,ID=2A RDS(on) 5.0 (Max) @VG=10V g Schematic dia ram 100% Avalanche Tested D G S Marking Diagram Y

MOSTRAR MÁS

Otros transistores... FIR20N10LG, FIR20N15LG, FIR20N50FG, FIR20N60FG, FIR20N65FG, FIR20NS65AFG, FIR24N50APTG, FIR25N03D3G, K3569, FIR2N65AFG, FIR2N70FG, FIR2N80FG, FIR30N03D3G, FIR40N10LG, FIR40N15LG, FIR40N20LG, FIR4N70FG