FIR2N70FG Todos los transistores

 

FIR2N70FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FIR2N70FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.3 Ohm
   Paquete / Cubierta: TO-220F
 

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FIR2N70FG Datasheet (PDF)

 ..1. Size:2012K  first semi
 fir2n70fg.pdf pdf_icon

FIR2N70FG

FIR2N70FGAdvanced N-Ch Power MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) : 6.3 (Max) @VG=10VG 100% Avalanche TestedD S gSchematic dia ram D G S Marking DiagramY = YearA = Assem

 9.1. Size:2079K  first semi
 fir2n80fg.pdf pdf_icon

FIR2N70FG

FIR2N80FG800V N-Channel MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=12nC (Typ.). BVDSS=800V,ID=2AG RDS(on) : 6.3 (Max) @VG=10VD S 100% Avalanche Tested gSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

 9.2. Size:1681K  first semi
 fir2n60alg.pdf pdf_icon

FIR2N70FG

FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

 9.3. Size:2194K  first semi
 fir2n65afg.pdf pdf_icon

FIR2N70FG

FIR2N65AFGAdvanced N-Ch Power MOSFET-XPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.5nC (Typ.). BVDSS=650V,ID=2AG RDS(on) : 4.2 (Typ) @VG=10VDS 100% Avalanche TestedgSchematic dia ramDGSY = YearA = Assembly LocationWW = Wor

MOSTRAR MÁS

Otros transistores... FIR20N50FG , FIR20N60FG , FIR20N65FG , FIR20NS65AFG , FIR24N50APTG , FIR25N03D3G , FIR2N60AFG , FIR2N65AFG , 2SK3568 , FIR2N80FG , FIR30N03D3G , FIR40N10LG , FIR40N15LG , FIR40N20LG , FIR4N70FG , FIR4N80FG , FIR4N90FG .

History: 2SK935 | P1503HV | 2SK2342 | JCS730B | ELM34400AA | AUIRF7734M2 | IPD50R520CP

 

 
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