FIR2N70FG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FIR2N70FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR2N70FG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 6.3 Ohm

Encapsulados: TO-220F

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FIR2N70FG datasheet

..1. Size:2012K first semi
fir2n70fg.pdf pdf_icon

FIR2N70FG Advanced N-Ch Power MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) 6.3 (Max) @VG=10V G 100% Avalanche Tested D S g Schematic dia ram D G S Marking Diagram Y = Year A = Assem

9.1. Size:2079K first semi
fir2n80fg.pdf pdf_icon

FIR2N80FG 800V N-Channel MOSFET-T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=12nC (Typ.). BVDSS=800V,ID=2A G RDS(on) 6.3 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = W

9.2. Size:1681K first semi
fir2n60alg.pdf pdf_icon

FIR2N60ALG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR2N60ALG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan D proprietary F-CellTM structure VDMOS technology. The improved G planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

9.3. Size:2194K first semi
fir2n65afg.pdf pdf_icon

FIR2N65AFG Advanced N-Ch Power MOSFET-X PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=6.5nC (Typ.). BVDSS=650V,ID=2A G RDS(on) 4.2 (Typ) @VG=10V DS 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = Wor

Otros transistores... FIR20N50FG, FIR20N60FG, FIR20N65FG, FIR20NS65AFG, FIR24N50APTG, FIR25N03D3G, FIR2N60AFG, FIR2N65AFG, 4435, FIR2N80FG, FIR30N03D3G, FIR40N10LG, FIR40N15LG, FIR40N20LG, FIR4N70FG, FIR4N80FG, FIR4N90FG

FIR2N70FG Todos los transistores