Справочник MOSFET. FIR2N70FG

 

FIR2N70FG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FIR2N70FG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 38 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.3 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для FIR2N70FG

 

 

FIR2N70FG Datasheet (PDF)

 ..1. Size:2012K  first semi
 fir2n70fg.pdf

FIR2N70FG FIR2N70FG

FIR2N70FGAdvanced N-Ch Power MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=9nC (Typ.). BVDSS=700V,ID=2A RDS(on) : 6.3 (Max) @VG=10VG 100% Avalanche TestedD S gSchematic dia ram D G S Marking DiagramY = YearA = Assem

 9.1. Size:2079K  first semi
 fir2n80fg.pdf

FIR2N70FG FIR2N70FG

FIR2N80FG800V N-Channel MOSFET-TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=12nC (Typ.). BVDSS=800V,ID=2AG RDS(on) : 6.3 (Max) @VG=10VD S 100% Avalanche Tested gSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

 9.2. Size:1681K  first semi
 fir2n60alg.pdf

FIR2N70FG FIR2N70FG

FIR2N60ALGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR2N60ALG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan Dproprietary F-CellTM structure VDMOS technology. The improved Gplanar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, prov

 9.3. Size:2194K  first semi
 fir2n65afg.pdf

FIR2N70FG FIR2N70FG

FIR2N65AFGAdvanced N-Ch Power MOSFET-XPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.5nC (Typ.). BVDSS=650V,ID=2AG RDS(on) : 4.2 (Typ) @VG=10VDS 100% Avalanche TestedgSchematic dia ramDGSY = YearA = Assembly LocationWW = Wor

 9.4. Size:3992K  first semi
 fir2n60afg.pdf

FIR2N70FG FIR2N70FG

FIR2N60AFGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 2 APD (TC=25) 35 WRDS(ON) 4.5 G Features D S Fast Switching gSchematic dia ram Low ON Resistance D Low Gate Charge Low Reverse transfer capacitances G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPower switch circuit of adaptor and charger. Y = Year

 9.5. Size:2967K  first semi
 fir2n65abpg.pdf

FIR2N70FG FIR2N70FG

FIR2N65ABPGFIR2N65ABPG650V N-Channel MOSFET -I PIN Connection TO-251(I-PAK)Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=6.7nC (Typ.).G D S BVDSS=650V,ID=2A RDS(on) : 5.0 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top