FQB8N90CTM Todos los transistores

 ..1. Size:430K  fairchild semi
 fqb8n90ctm.pdf

December 2013 FQB8N90C N-Channel QFET MOSFET 900 V, 6.3 A, 1.9 Description Features These N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF) especia

 6.1. Size:538K  onsemi
 fqb8n90c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:1032K  fairchild semi
 fqb8n60cf fqb8n60cftm.pdf

October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to

 9.2. Size:965K  fairchild semi
 fqb8n60c fqi8n60c fqi8n60ctu.pdf

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall

 9.3. Size:594K  fairchild semi
 fqb8n25tm.pdf

May 2000 TM QFET QFET QFET QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has

 9.4. Size:754K  onsemi
 fqb8n60c fqi8n60c.pdf

FQB8N60C / FQI8N60C N-Channel QFET MOSFET 600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, ID = 3.75 A Description Low Gate Charge (Typ. 28 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Crss (Typ. 12 pF) stripe and DMOS technology. This advanced MOSFET technology has