FQB8N90CTM Spec and Replacement
Type Designator: FQB8N90CTM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 171 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO263 D2PAK
FQB8N90CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB8N90CTM Specs
fqb8n90ctm.pdf
December 2013 FQB8N90C N-Channel QFET MOSFET 900 V, 6.3 A, 1.9 Description Features These N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 V transistors are produced using Fairchild s proprietary, planar Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF) especia... See More ⇒
fqb8n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fqb8n60cf fqb8n60cftm.pdf
October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 28nC) DMOS technology. Low Crss ( typical 12pF) This advanced technology has been especially tailored to... See More ⇒
fqb8n60c fqi8n60c fqi8n60ctu.pdf
October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especiall... See More ⇒
Detailed specifications: FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , 5N60 , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 .
Keywords - FQB8N90CTM MOSFET specs
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