FQB8N90CTM
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB8N90CTM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 171
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 6.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9
Ohm
Package:
TO263
D2PAK
FQB8N90CTM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB8N90CTM
Datasheet (PDF)
..1. Size:430K fairchild semi
fqb8n90ctm.pdf 
December 2013FQB8N90CN-Channel QFET MOSFET900 V, 6.3 A, 1.9 Description FeaturesThese N-Channel enhancement mode power field effect 6.3 A, 900 V, RDS(on) = 1.9 (Max.) @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, planar Low Gate Charge (Typ. 35 nC)stripe, DMOS technology. This advanced technology has been Low Crss (Typ. 12 pF)especia
6.1. Size:538K onsemi
fqb8n90c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.1. Size:1032K fairchild semi
fqb8n60cf fqb8n60cftm.pdf
October 2008TMQFETFQB8N60CF600V N-Channel MOSFETFeatures Description 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 28nC)DMOS technology. Low Crss ( typical 12pF)This advanced technology has been especially tailored to
9.2. Size:965K fairchild semi
fqb8n60c fqi8n60c fqi8n60ctu.pdf
October 2008QFETFQB8N60C / FQI8N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especiall
9.3. Size:594K fairchild semi
fqb8n25tm.pdf
May 2000TMQFETQFETQFETQFETFQB8N25 / FQI8N25250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 250V, RDS(on) = 0.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has
9.4. Size:754K onsemi
fqb8n60c fqi8n60c.pdf
FQB8N60C / FQI8N60CN-Channel QFET MOSFET600 V, 7.5 A, 1.2 Features 7.5 A, 600 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V,ID = 3.75 ADescription Low Gate Charge (Typ. 28 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Low Crss (Typ. 12 pF)stripe and DMOS technology. This advanced MOSFET technology has
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