All MOSFET. FQB8N90CTM Datasheet

 

FQB8N90CTM MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB8N90CTM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 171 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6.3 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: TO263_D2PAK

FQB8N90CTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FQB8N90CTM Datasheet (PDF)

1.1. fqb8n90ctm.pdf Size:430K _fairchild_semi

FQB8N90CTM
FQB8N90CTM

December 2013 FQB8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω Description Features These N-Channel enhancement mode power field effect • 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge (Typ. 35 nC) stripe, DMOS technology. This advanced technology has been • Low Crss (Typ. 12 pF) especia

5.1. fqb8n60c fqi8n60c.pdf Size:965K _fairchild_semi

FQB8N90CTM
FQB8N90CTM

October 2008 QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

5.2. fqb8n25tm.pdf Size:594K _fairchild_semi

FQB8N90CTM
FQB8N90CTM

May 2000 TM QFET QFET QFET QFET FQB8N25 / FQI8N25 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0A, 250V, RDS(on) = 0.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has

 5.3. fqb8n60cf fqb8n60cftm.pdf Size:1032K _fairchild_semi

FQB8N90CTM
FQB8N90CTM

October 2008 TM QFET FQB8N60CF 600V N-Channel MOSFET Features Description • 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 28nC) DMOS technology. • Low Crss ( typical 12pF) This advanced technology has been especially tailored to

Datasheet: FQP2N80 , FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , IRF5210 , FQP34N20 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 .

 
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