FQP34N20 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQP34N20 datasheet

..1. Size:732K fairchild semi
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April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been

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..3. Size:750K cn vbsemi
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FQP34N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package 200 95 0.070 at VGS = 6 V 38.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Industrial D G G D

0.1. Size:674K fairchild semi
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June 2000 TM QFET QFET QFET QFET FQP34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has

Otros transistores... FQP8N60C , FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , RFP50N06 , FCPF11N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 .