All MOSFET. FQP34N20 Datasheet

 

FQP34N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP34N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 60 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO220

FQP34N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP34N20 Datasheet (PDF)

1.1. fqp34n20l.pdf Size:674K _fairchild_semi

FQP34N20
FQP34N20

June 2000 TM QFET QFET QFET QFET FQP34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 31A, 200V, RDS(on) = 0.075Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 55 nC) planar stripe, DMOS technology. • Low Crss ( typical 52 pF) This advanced technology has

1.2. fqp34n20.pdf Size:732K _fairchild_semi

FQP34N20
FQP34N20

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especially ta

 

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