FIR5N80FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR5N80FG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO-220F

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FIR5N80FG datasheet

 ..1. Size:2130K  first semi
 fir5n80fg.pdf pdf_icon

FIR5N80FG

FIR5N80FG 800V N-Channel MOSFET -T PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=31nC (Typ.). BVDSS=800V,ID=5A G D S RDS(on) 2.4 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembl

 9.1. Size:4070K  first silicon
 fir5n60fg.pdf pdf_icon

FIR5N80FG

FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=9.8F(Typ.) Low gate charge Qg=12nC(Typ.) G D S Low RDS(on) RDS(on)=1.7 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific Device Code Absolute maxi

 9.2. Size:5898K  first semi
 fir5n60fg.pdf pdf_icon

FIR5N80FG

FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=600V(Min.) Low Crss Crss=8.5F(Typ.) Low gate charge Qg=14.5nC(Typ.) G D S Low RDS(on) RDS(on)=1.8 g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific D

 9.3. Size:4172K  first semi
 fir5n50fg.pdf pdf_icon

FIR5N80FG

FIR5N50FG N-Channel Power MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) 1.5 (Max) @VG=10V G DS 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year YAWWVA A = Assembl

MOSTRAR MÁS

Otros transistores... FIR40N20LG, FIR4N70FG, FIR4N80FG, FIR4N90FG, FIR50N06LG, FIR50N15PG, FIR5N50FG, FIR5N65FG, NCEP15T14, FIR5NS70ALG, FIR60N04LG, FIR6N40FG, FIR6N60FG, FIR6N65FG, FIR6N70FG, FIR6N90FG, FIR7NS65AFG