All MOSFET. FIR5N80FG Datasheet

 

FIR5N80FG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR5N80FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F

 FIR5N80FG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR5N80FG Datasheet (PDF)

 ..1. Size:2130K  first semi
 fir5n80fg.pdf

FIR5N80FG FIR5N80FG

FIR5N80FG800V N-Channel MOSFET -TPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=31nC (Typ.). BVDSS=800V,ID=5AG D S RDS(on) : 2.4 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembl

 9.1. Size:4070K  first silicon
 fir5n60fg.pdf

FIR5N80FG FIR5N80FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8F(Typ.) Low gate charge : Qg=12nC(Typ.) G D S Low RDS(on) :RDS(on)=1.7D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific Device CodeAbsolute maxi

 9.2. Size:5898K  first semi
 fir5n60fg.pdf

FIR5N80FG FIR5N80FG

FIR5N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage: BVDSS=600V(Min.) Low Crss : Crss=8.5F(Typ.) Low gate charge : Qg=14.5nC(Typ.) G D S Low RDS(on) :RDS(on)=1.8gSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR5N60FFIR5N60F = Specific D

 9.3. Size:4172K  first semi
 fir5n50fg.pdf

FIR5N80FG FIR5N80FG

FIR5N50FG N-Channel Power MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=14nC (Typ.). BVDSS=500V,ID=5A RDS(on) : 1.5 (Max) @VG=10V GDS 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearYAWWVAA = Assembl

 9.4. Size:1995K  first semi
 fir5ns70alg.pdf

FIR5N80FG FIR5N80FG

FIR5NS70ALG5.0A,700V N-CHANNEL SUPER-JUNCTION MOSFETPIN Connection TO-252(D-PAK) DESCRIPTION The FIR5NS70AL is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching Dtime, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inGhigh speed switching applicati

 9.5. Size:3045K  first semi
 fir5n65fg.pdf

FIR5N80FG FIR5N80FG

FIR5N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=13.7nC (Typ.). BVDSS=650V,ID=4.5AG D S RDS(on) : 2.6 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assem

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