FIR7NS65AFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR7NS65AFG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.64 Ohm
   Paquete / Cubierta: TO-220F

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FIR7NS65AFG Datasheet (PDF)

..1. Size:2155K first semi
fir7ns65afg.pdf

FIR7NS65AFG7A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETsproduced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi

8.1. Size:2916K first semi
fir7ns70afg fir7ns70alg.pdf

FIR7NS70AFG/ALG7A,700V DP MOS Power Transistor-EPIN Connection TO-220FDESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi

9.1. Size:5294K first semi
fir7n60fg.pdf

FIR7N60FGAdvanced N-Ch Power MOSFET-IGeneral Description PIN Connection TO-220FFIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit

9.2. Size:1832K first semi
fir7n65fg.pdf

FIR7N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR7N65FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

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