FIR7NS65AFG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FIR7NS65AFG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 27 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.64 Ohm
Тип корпуса: TO-220F
- подбор MOSFET транзистора по параметрам
FIR7NS65AFG Datasheet (PDF)
fir7ns65afg.pdf

FIR7NS65AFG7A, 650V DP MOS POWER TRANSISTOR-SPIN Connection TO-220FDESCRIPTION FIR7NS65AFG is an N-channel enhancement mode high voltage power MOSFETsproduced using technology. DP MOS It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, G D S high power density,and superior thermal behavi
fir7ns70afg fir7ns70alg.pdf

FIR7NS70AFG/ALG7A,700V DP MOS Power Transistor-EPIN Connection TO-220FDESCRIPTION FIR7NS70AFG/ALG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavi
fir7n60fg.pdf

FIR7N60FGAdvanced N-Ch Power MOSFET-IGeneral Description PIN Connection TO-220FFIR7N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior swit
fir7n65fg.pdf

FIR7N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral Description FIR7N65FG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: ZVP4105ASTZ | RU7550S | AUIRFZ34N | 2N6760JANTXV | DAMI280N200 | IRLML9301TRPBF | STP20NM60FP
History: ZVP4105ASTZ | RU7550S | AUIRFZ34N | 2N6760JANTXV | DAMI280N200 | IRLML9301TRPBF | STP20NM60FP



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