FIR8N60FG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR8N60FG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO-220F

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FIR8N60FG datasheet

 ..1. Size:2461K  first semi
 fir8n60fg.pdf pdf_icon

FIR8N60FG

FIR8N60FG 600V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) 1.2 (Max) @VG=10V G D S 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly

 8.1. Size:3949K  first semi
 fir8n65fg.pdf pdf_icon

FIR8N60FG

FIR8N65FG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=28nC (Typ.). BVDSS=650V,ID=7A G RDS(on) 1.30 (Max) @VG=10V D S 100% Avalanche Tested g Schematic dia ram D G S Y = Year A = Assembly Location WW = W

 9.1. Size:4035K  first semi
 fir8n80fg.pdf pdf_icon

FIR8N60FG

FIR8N80FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) 1.9 (Max) @VG=10V g Schematic dia ram D 100% Avalanche Tested G S Marking Diagram Y = Year A

 9.2. Size:3128K  first semi
 fir8n70fg.pdf pdf_icon

FIR8N60FG

FIR8N70FG PIN Connection TO-220F 700V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 22nC (Typ.) G BVDSS=700V,ID=8A D S RDS(on) 1.4 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

MOSTRAR MÁS

Otros transistores... FIR6N70FG, FIR6N90FG, FIR7NS65AFG, FIR7NS70AFG, FIR7NS70ALG, FIR80N03LG, FIR80N08PG, FIR80N10LG, SI2302, FIR8N65FG, FIR8N70FG, FIR8N80FG, FIR96N08PG, FIR9N50FG, FIR9N65LG, FIR9N90FG, DAC014N120Z5