FIR8N60FG Todos los transistores

 

FIR8N60FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FIR8N60FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220F
 

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FIR8N60FG Datasheet (PDF)

 ..1. Size:2461K  first semi
 fir8n60fg.pdf pdf_icon

FIR8N60FG

FIR8N60FG600V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=25.9nC (Typ.). BVDSS=600V,ID=7A RDS(on) : 1.2 (Max) @VG=10VG D S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly

 8.1. Size:3949K  first semi
 fir8n65fg.pdf pdf_icon

FIR8N60FG

FIR8N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=28nC (Typ.). BVDSS=650V,ID=7AG RDS(on) : 1.30 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

 9.1. Size:4035K  first semi
 fir8n80fg.pdf pdf_icon

FIR8N60FG

FIR8N80FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) : 1.9 (Max) @VG=10V gSchematic dia ram D 100% Avalanche Tested G S Marking DiagramY = YearA

 9.2. Size:3128K  first semi
 fir8n70fg.pdf pdf_icon

FIR8N60FG

FIR8N70FGPIN Connection TO-220F700V N-Channel MOSFET Features: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 22nC (Typ.)G BVDSS=700V,ID=8AD S RDS(on) : 1.4 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly Loc

MOSTRAR MÁS

Otros transistores... FIR6N70FG , FIR6N90FG , FIR7NS65AFG , FIR7NS70AFG , FIR7NS70ALG , FIR80N03LG , FIR80N08PG , FIR80N10LG , SI2302 , FIR8N65FG , FIR8N70FG , FIR8N80FG , FIR96N08PG , FIR9N50FG , FIR9N65LG , FIR9N90FG , DAC014N120Z5 .

 

 
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