P0165EI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0165EI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 33 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10.6 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de P0165EI MOSFET
P0165EI Datasheet (PDF)
p0165ei.pdf

N-Channel Enhancement Mode P0165EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G650V 10.6 1A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 2
p0165ed.pdf

N-Channel Enhancement Mode P0165EDNIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G650V 10.6 1A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 650 VGate-Source Voltage VGS 30 VTC = 25 C
p0165ai.pdf

P0165AIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID650V 14 @VGS = 10V 1ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C1IDContinuous Drain Current2TC = 100 C0.6AIDM3Pulsed Drain Current1,
Otros transistores... DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED , 8205A , P0260EDA , P0260EIA , P0306BT , P0406AK , P0460EDA , P0470ED , P0470ETF , P0470JD .
History: FIR4N80FG | HAT2089WP | FK16VS-5
History: FIR4N80FG | HAT2089WP | FK16VS-5



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