All MOSFET. P0165EI Datasheet

 

P0165EI MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0165EI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.4 nC
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.6 Ohm
   Package: TO-251

 P0165EI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0165EI Datasheet (PDF)

 ..1. Size:204K  niko-sem
 p0165ei.pdf

P0165EI P0165EI

N-Channel Enhancement Mode P0165EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G650V 10.6 1A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V TC = 2

 8.1. Size:188K  niko-sem
 p0165ed.pdf

P0165EI P0165EI

N-Channel Enhancement Mode P0165EDNIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G650V 10.6 1A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 650 VGate-Source Voltage VGS 30 VTC = 25 C

 9.1. Size:381K  unikc
 p0165ai.pdf

P0165EI P0165EI

P0165AIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID650V 14 @VGS = 10V 1ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C1IDContinuous Drain Current2TC = 100 C0.6AIDM3Pulsed Drain Current1,

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