P1306EK Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P1306EK  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 368 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: PDFN5X6P

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P1306EK datasheet

 ..1. Size:352K  niko-sem
 p1306ek.pdf pdf_icon

P1306EK

P-Channel Logic Level Enhancement Mode P1306EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 13.5m -43A D D D D D G. GATE D. DRAIN S. SOURCE G 100% UIS Tested 100% Rg Tested #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

 8.1. Size:210K  niko-sem
 p1306ed.pdf pdf_icon

P1306EK

P-Channel Enhancement Mode P1306ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 13.5m -48A G 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 9.1. Size:171K  motorola
 mtp1306rev0.pdf pdf_icon

P1306EK

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al

 9.2. Size:176K  motorola
 mtp1306.pdf pdf_icon

P1306EK

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP1306/D Advance Information MTP1306 HDTMOS E-FET. High Density Power FET N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high cell density HDTMOS power FET is 75 AMPERES designed to withstand high energy in the avalanche and commuta- 30 VOLTS tion modes. This new energy efficient design al

MOSTRAR MÁS

Otros transistores... P1060ETFNA, P1065ETF, P1120EF, P1160JD, P1160JF, P1165JD, P1165JFN, P1306ED, 5N60, P1350ETF, P1406BV, P1410BD, P1410BK, P1560JD, P1560JF, P1610AK, P1610ATF