All MOSFET. P1306EK Datasheet

 

P1306EK MOSFET. Datasheet pdf. Equivalent


   Type Designator: P1306EK
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 368 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: PDFN5X6P

 P1306EK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P1306EK Datasheet (PDF)

 ..1. Size:352K  niko-sem
 p1306ek.pdf

P1306EK P1306EK

P-Channel Logic Level Enhancement Mode P1306EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 13.5m -43A DD D D DG. GATE D. DRAIN S. SOURCE G100% UIS Tested 100% Rg Tested #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

 8.1. Size:210K  niko-sem
 p1306ed.pdf

P1306EK P1306EK

P-Channel Enhancement Mode P1306ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 13.5m -48A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =

 9.1. Size:171K  motorola
 mtp1306rev0.pdf

P1306EK P1306EK

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1306/DAdvance InformationMTP1306HDTMOS E-FET.High Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is75 AMPERESdesigned to withstand high energy in the avalanche and commuta-30 VOLTStion modes. This new energy efficient design al

 9.2. Size:176K  motorola
 mtp1306.pdf

P1306EK P1306EK

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP1306/DAdvance InformationMTP1306HDTMOS E-FET.High Density Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced highcell density HDTMOS power FET is75 AMPERESdesigned to withstand high energy in the avalanche and commuta-30 VOLTStion modes. This new energy efficient design al

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTH6N50D2

 

 
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