P2206BV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P2206BV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0225 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de P2206BV MOSFET
P2206BV Datasheet (PDF)
p2206bv.pdf

N-Channel Logic Level Enhancement Mode P2206BV NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m 60V 7A GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS
p2206bd.pdf

P2206BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22.5m @VGS = 10V60V 32ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC= 25 C32IDContinuous Drain CurrentTC= 100 C20AIDM100Pulsed Drain Current1
p2206bea.pdf

P2206BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 20.8m 25A G. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vo
p2206bd.pdf

N-Channel Enhancement Mode P2206BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G60V 22.5m 32A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25
Otros transistores... P1615ATFA , P1625ED , P1850EF , P2020YD , P2060JF , P2206BEA , P2206BT , P2206BTF , MMIS60R580P , P2206HK , P2610BI , P2610BK , P2610BTF , P2A06BT , P3506ED , P3506EK , P3506ET .
History: SLW24N50C | TK40J20D | IXTQ50N20P | IXFX120N30P3 | 10N60L-TF2-T | PSMN004-60B | SLP8N65C
History: SLW24N50C | TK40J20D | IXTQ50N20P | IXFX120N30P3 | 10N60L-TF2-T | PSMN004-60B | SLP8N65C



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