Справочник MOSFET. P2206BV

 

P2206BV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P2206BV
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0225 Ohm
   Тип корпуса: SOP-8

 Аналог (замена) для P2206BV

 

 

P2206BV Datasheet (PDF)

 ..1. Size:246K  niko-sem
 p2206bv.pdf

P2206BV P2206BV

N-Channel Logic Level Enhancement Mode P2206BV NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m 60V 7A GG : GATE D : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS

 8.1. Size:793K  unikc
 p2206bd.pdf

P2206BV P2206BV

P2206BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22.5m @VGS = 10V60V 32ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC= 25 C32IDContinuous Drain CurrentTC= 100 C20AIDM100Pulsed Drain Current1

 8.2. Size:259K  niko-sem
 p2206bea.pdf

P2206BV P2206BV

P2206BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 20.8m 25A G. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vo

 8.3. Size:365K  niko-sem
 p2206bd.pdf

P2206BV P2206BV

N-Channel Enhancement Mode P2206BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G60V 22.5m 32A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.4. Size:313K  niko-sem
 p2206bt.pdf

P2206BV P2206BV

N-Channel Enhancement Mode P2206BT NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G60V 22.5m 35A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.5. Size:299K  niko-sem
 p2206btf.pdf

P2206BV P2206BV

N-Channel Enhancement Mode P2206BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G60V 22.5m 28A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC =

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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