P3710BTF Todos los transistores

 

P3710BTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P3710BTF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 146 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

P3710BTF Datasheet (PDF)

 ..1. Size:342K  niko-sem
p3710btf.pdf pdf_icon

P3710BTF

N-Channel Enhancement Mode P3710BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 100V 37m 19A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 7.1. Size:185K  niko-sem
p3710bt.pdf pdf_icon

P3710BTF

N-Channel Enhancement Mode P3710BTNIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 100V 37m 31A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100 VGate-Source Voltage VGS 20 VTC = 25 C 3

 8.1. Size:748K  unikc
p3710bd.pdf pdf_icon

P3710BTF

P3710BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID37m @VGS = 10V100V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM75Pulsed Drain Curren

 8.2. Size:464K  unikc
p3710bv.pdf pdf_icon

P3710BTF

P3710BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID37m @VGS = 10V100V 5.2ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C5.2IDContinuous Drain CurrentTA = 70 C4.2AIDM40Pulsed Drain Curren

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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