FQP4P40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP4P40
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.1 Ohm
Encapsulados: TO220
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FQP4P40 datasheet
fqp4p40.pdf
August 2000 TM QFET QFET QFET QFET FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been
fqp4p40.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp4p25.pdf
December 2000 TM QFET QFET QFET QFET FQP4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is e
Otros transistores... FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, 7N60, FQP50N06L, FQP55N10, FQP6N60C, FQP5N60C, FQPF5N50C, FQP65N06, FQP6N40C, FQU2N90
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