All MOSFET. FQP4P40 Datasheet

 

FQP4P40 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP4P40

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3.1 Ohm

Package: TO220

FQP4P40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP4P40 Datasheet (PDF)

1.1. fqp4p40.pdf Size:637K _fairchild_semi

FQP4P40
FQP4P40

August 2000 TM QFET QFET QFET QFET FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -3.5A, -400V, RDS(on) = 3.1? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18 nC) planar stripe, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially t

5.1. fqp4p25.pdf Size:568K _fairchild_semi

FQP4P40
FQP4P40

December 2000 TM QFET QFET QFET QFET FQP4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -4.0A, -250V, RDS(on) = 2.1? @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 10.3 pF) This advanced technology is especially tai

Datasheet: FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , BUK455-200A , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 .

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