FQP4P40 MOSFET Datasheet: P-Ch, 400V, 3.5A. Full specification with pinout and replacement list

FQP4P40 Specs and Replacement

Type Designator: FQP4P40

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm

Package: TO220

FQP4P40 substitution

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FQP4P40 datasheet

..1. Size:637K fairchild semi
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August 2000 TM QFET QFET QFET QFET FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been... See More ⇒

..2. Size:1235K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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fqp4p25.pdf pdf_icon

December 2000 TM QFET QFET QFET QFET FQP4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 10.3 pF) This advanced technology is e... See More ⇒

Detailed specifications: FQP44N10, FQB11N40C, FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, 7N60, FQP50N06L, FQP55N10, FQP6N60C, FQP5N60C, FQPF5N50C, FQP65N06, FQP6N40C, FQU2N90