FQP4P40 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP4P40
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
Package: TO220
FQP4P40 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP4P40 Datasheet (PDF)
fqp4p40.pdf
August 2000TMQFETQFETQFETQFETFQP4P40400V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -3.5A, -400V, RDS(on) = 3.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 18 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been
fqp4p40.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp4p25.pdf
December 2000TMQFETQFETQFETQFETFQP4P25250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.0A, -250V, RDS(on) = 2.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 10.3 pF)This advanced technology is e
Datasheet: FQP44N10 , FQB11N40C , FQP45N15V2 , FQP46N15 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , CEP83A3 , FQP50N06L , FQP55N10 , FQP6N60C , FQP5N60C , FQPF5N50C , FQP65N06 , FQP6N40C , FQU2N90 .
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