PA110NV Datasheet. Equivalente

 ..1. Size:340K  niko-sem
 pa110nv.pdf

N- & P-Channel Enhancement Mode Field PA110NV NIKO-SEM Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 170m -2.5A Q1 100V 110m 2.9A G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -100 100 V Gate-Source V

 8.1. Size:551K  niko-sem
 pa110nk.pdf

N- & P-Channel Enhancement Mode Field PA110NK NIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 180m -10A G. GATE Q1 100V 110m 9A D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V

 9.1. Size:771K  unikc
 pa110bc.pdf

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 4 ID Continuous Drain Current TA = 100 C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E

 9.2. Size:465K  unikc
 pa110bv.pdf

PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.2 ID Continuous Drain Current TA = 70 C 2.5 A IDM 10 Pulsed Drain Curr

 9.3. Size:411K  unikc
 pa110bd.pdf

PA110BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Curren

 9.4. Size:739K  unikc
 pa110bda.pdf

PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 105m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9.2 A IDM 20 Pulsed Drain Cur

 9.5. Size:445K  unikc
 pa110bl.pdf

PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 6 ID Continuous Drain Current TA = 25 C 3.2 A TA = 100 C 2 IDM 15 Pulsed Drain Current1 IAS Aval

 9.6. Size:224K  niko-sem
 pa110bc.pdf

PA110BC N-Channel Enhancement Mode NIKO-SEM SOT-89 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 110m 4A 1 2 3 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TA =

 9.7. Size:342K  niko-sem
 pa110bea.pdf

PA110BEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 100V 105m 8.5A D D D D G. GATE G D. DRAIN S. SOURCE #1 S S S G 100% UIS Tested S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source

 9.8. Size:391K  niko-sem
 pa110bda.pdf

PA110BDA N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 105m 15A G 1 GATE 2 DRAIN 3 SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

 9.9. Size:240K  niko-sem
 pa110bl.pdf

PA110BL N-Channel Enhancement Mode NIKO-SEM SOT-223 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 110m 3A 1. GATE 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 6 TA = 25 C 3.2 A

 9.10. Size:206K  niko-sem
 pa110ed.pdf

 9.11. Size:308K  niko-sem
 pa110hea.pdf

Dual N-Channel Enhancement Mode PA110HEA NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 110m 8.4A #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25