PA110NV PDF and Equivalents Search

 

PA110NV Specs and Replacement


   Type Designator: PA110NV
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOP-8
 

 PA110NV substitution

   - MOSFET ⓘ Cross-Reference Search

 

PA110NV datasheet

 ..1. Size:340K  niko-sem
pa110nv.pdf pdf_icon

PA110NV

N- & P-Channel Enhancement Mode Field PA110NV NIKO-SEM Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 170m -2.5A Q1 100V 110m 2.9A G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -100 100 V Gate-Source V... See More ⇒

 8.1. Size:551K  niko-sem
pa110nk.pdf pdf_icon

PA110NV

N- & P-Channel Enhancement Mode Field PA110NK NIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D1 D1 D2 D2 PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -100V 180m -10A G. GATE Q1 100V 110m 9A D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage V... See More ⇒

 9.1. Size:771K  unikc
pa110bc.pdf pdf_icon

PA110NV

PA110BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 4 ID Continuous Drain Current TA = 100 C 3.5 A IDM 15 Pulsed Drain Current1 IAS Avalanche Current 4.8 E... See More ⇒

 9.2. Size:465K  unikc
pa110bv.pdf pdf_icon

PA110NV

PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 110m @VGS = 10V 100V 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.2 ID Continuous Drain Current TA = 70 C 2.5 A IDM 10 Pulsed Drain Curr... See More ⇒

Detailed specifications: P9006EDA , P9006EVA , P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , P55NF06 , PA410BTF , PA515BD , PA520BA , PA567EA , PA567JA , PA597BA , PA5D8EA , PA5D8JA .

History: P8010HK

Keywords - PA110NV MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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