FQP50N06L Todos los transistores

 

FQP50N06L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQP50N06L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 121 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 52 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: TO220

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FQP50N06L datasheet

 ..1. Size:694K  fairchild semi
fqp50n06l.pdf pdf_icon

FQP50N06L

May 2001 TM QFET FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially t

 ..2. Size:230K  inchange semiconductor
fqp50n06l.pdf pdf_icon

FQP50N06L

isc N-Channel MOSFET Transistor FQP50N06L DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies

 6.1. Size:644K  fairchild semi
fqp50n06.pdf pdf_icon

FQP50N06L

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast

 6.2. Size:645K  onsemi
fqp50n06.pdf pdf_icon

FQP50N06L

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast

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