FQP50N06L Datasheet. Specs and Replacement

Type Designator: FQP50N06L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 121 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO220

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FQP50N06L datasheet

 ..1. Size:694K  fairchild semi
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FQP50N06L

May 2001 TM QFET FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially t... See More ⇒

 ..2. Size:230K  inchange semiconductor
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FQP50N06L

isc N-Channel MOSFET Transistor FQP50N06L DESCRIPTION Drain Current I =50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies ... See More ⇒

 6.1. Size:644K  fairchild semi
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FQP50N06L

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast ... See More ⇒

 6.2. Size:645K  onsemi
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FQP50N06L

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially tailored to Fast ... See More ⇒

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Detailed specifications: FQB11N40C, FQP45N15V2, FQP46N15, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, IRFZ48N, FQP55N10, FQP6N60C, FQP5N60C, FQPF5N50C, FQP65N06, FQP6N40C, FQU2N90, FQP6N40CF

Keywords - FQP50N06L MOSFET specs

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